검색결과 : 1건
No. | Article |
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1 |
Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Muller GS, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G Journal of Crystal Growth, 352(1), 39, 2012 |