검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V Materials Science Forum, 457-460, 921, 2004 |
| 2 |
Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB Materials Science Forum, 457-460, 1101, 2004 |
| 3 |
A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB Materials Science Forum, 457-460, 1249, 2004 |
| 4 |
Hydrogen incorporation into SiC using plasma-hydrogenation Koshka Y, Draper WA, Lakshman RY, Scofield J, Saddow SE Materials Science Forum, 389-3, 569, 2002 |
| 5 |
On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal Sankin I, Casady JB, Dufrene JB, Draper WA, Kretchmer J, Vandersand J, Kumar V, Mazzola MS, Saddow SE Solid-State Electronics, 45(9), 1653, 2001 |