화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Time-of-flight secondary ion mass spectrometry study on Be/Al-based multilayer interferential structures
Drozdov MN, Drozdov YN, Chkhalo NI, Polkovnikov VN, Yunin PA, Chirkin MV, Gololobov GP, Suvorov DV, Fu DJ, Pelenovich V, Tolstogouzov A
Thin Solid Films, 661, 65, 2018
2 Characterization of interfaces in mosaic CVD diamond crystal
Muchnikov AB, Radishev DB, Vikharev AL, Gorbachev AM, Mitenkin AV, Drozdov MN, Drozdov YN, Yunin PA
Journal of Crystal Growth, 442, 62, 2016
3 Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry
Drozdov MN, Drozdov YN, Csik A, Novikov AV, Vad K, Yunin PA, Yurasov DV, Belykh SF, Gololobov GP, Suvorov DV, Tolstogouzov A
Thin Solid Films, 607, 25, 2016
4 Recovery of SIMS depth profiles with account for nonstationary effects
Yunin PA, Drozdov YN, Drozdov MN, Yurasova DV
Applied Surface Science, 307, 33, 2014
5 Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals
Andreev BA, Gavrilenko LV, Drozdov YN, Yunin PA, Pryakhin DA, Mochalov LA, Sennikov PG, Bulkin P, Roca i Cabarrocas P
Thin Solid Films, 552, 46, 2014
6 Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24 GHz) plasma from silicon tetrafluoride precursor
Mansfeld DA, Vodopyanov AV, Golubev SV, Sennikov PG, Mochalov LA, Andreev BA, Drozdov YN, Drozdov MN, Shashkin VI, Bulkine P, Cabarrocas PRI
Thin Solid Films, 562, 114, 2014
7 Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
Shaleev MV, Novikov AV, Yablonskiy AN, Drozdov YN, Kuznetsov OA, Lobanov DN, Krasilnik ZF
Thin Solid Films, 517(1), 385, 2008
8 Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands
Drozdov YN, Krasilnik ZF, Kudryavtsev KE, Lobanov DN, Novikov AV, Shaleev MV, Shengurov DV, Shmagin VB, Yablonskiy AN
Thin Solid Films, 517(1), 398, 2008
9 InGaAsN/GaAs QD and QW structures grown by MOVPE
Daniltsev VM, Drozdov MN, Drozdov YN, Gaponova DM, Khrykin OI, Murel AV, Shashkin VI, Vostokov NV
Journal of Crystal Growth, 248, 343, 2003
10 Transition from "dome" to "pyramid" shape of self-assembled GeSi islands
Vostokov NV, Dolgov IV, Drozdov YN, Krasil'nik ZF, Lobanov DN, Moldavskaya LD, Novikov AV, Postnikov VV, Filatov DO
Journal of Crystal Growth, 209(2-3), 302, 2000