검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E Solid-State Electronics, 113, 15, 2015 |
| 2 |
Conductance deep-level transient spectroscopy study of 1 mu m gate length 4H-SiC MESFETs Gassoumi M, Bluet JM, Dermoul I, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Solid-State Electronics, 50(2), 214, 2006 |
| 3 |
Hole-like Defects in n-Channel 4H-SIC MESFETs Observed by Current Transient Spectroscopy Bluet JM, Gassoumi M, Dermoul I, Chekir F, Maaref H, Guillot G, Morvan E, Dua C, Brylinski C Materials Science Forum, 483, 865, 2005 |
| 4 |
Room temperature implantation and activation kinetics of nitrogen and phosphorus in 4H-SiC crystals. Blanque S, Perez R, Godignon P, Mestres N, Morvan E, Kerlain A, Dua C, Brylinski C, Zielinski M, Camassel J Materials Science Forum, 457-460, 893, 2004 |
| 5 |
Effect of passivation on device stability and gate reverse characteristics on 4H-SiC MESFETs Kerlain A, Morvan E, Dua C, Caillas N, Brylinski C Materials Science Forum, 457-460, 1177, 2004 |
| 6 |
Deep level investigation by current and capacitance transient spectroscopy in 4H-SiC MESFETs on semi-insulating substrates. Gassoumi M, Sghaier N, Dermoul I, Chekir F, Maaref H, Bluet JM, Guillot G, Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 457-460, 1185, 2004 |
| 7 |
Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scattering spectroscopy and pulsed I-V measurements Aubry R, Jacquet JC, Dua C, Gerard H, Dessertenne B, di Forte-Poisson MA, Cordier Y, Delage SL Materials Science Forum, 457-460, 1625, 2004 |
| 8 |
Influence of material properties on wide-bandgap microwave power device characteristics Morvan E, Kerlain A, Dua C, Brylinski C Materials Science Forum, 433-4, 731, 2002 |
| 9 |
SiC microwave power devices Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 353-356, 669, 2001 |
| 10 |
Power density comparison between microwave power MESFET's processed on conductive and semi-insulating wafer Noblanc O, Arnodo C, Dua C, Chartier E, Brylinski C Materials Science Forum, 338-3, 1247, 2000 |