검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres Yang JK, Wei TB, Huo ZQ, Hu Q, Zhang YH, Duan RF, Wang JX Journal of Crystal Growth, 387, 101, 2014 |
| 2 |
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching Wei TB, Yang JK, Hu Q, Duan RF, Huo ZQ, Wang JX, Zeng YP, Wang GH, Li JM Journal of Crystal Growth, 314(1), 141, 2011 |
| 3 |
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire Wei TB, Hu Q, Duan RF, Wei XC, Yang JK, Wang JX, Zeng YP, Wang GH, Li JM Journal of the Electrochemical Society, 157(7), H721, 2010 |
| 4 |
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy Wei TB, Hu Q, Duan RF, Wei XC, Huo ZQ, Wang JX, Zeng YP, Wang GH, Li JM Journal of Crystal Growth, 311(17), 4153, 2009 |
| 5 |
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer Wei TB, Duan RF, Wang JX, Li JM, Huo ZQ, Ma P, Liu Z, Zeng YP Applied Surface Science, 253(18), 7423, 2007 |