검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation Kennedy N, Garvey S, Maccioni B, Eaton L, Nolan M, Duffy R, Meaney F, Kennedy M, Holmes JD, Long B Langmuir, 36(34), 9993, 2020 |
| 2 |
Working governance for working land Brockington D, Adams WM, Agarwal B, Agrawal A, Buscher B, Chhatre A, Duffy R, Fletcher R, Oldekop JA Science, 362(6420), 1257, 2018 |
| 3 |
Biology's drones: Undermined by fear Humle T, Duffy R, Roberts DL, Sandbrook C, St John FAV, Smith RJ Science, 344(6190), 1351, 2014 |
| 4 |
Impact ionization induced dynamic floating body effect in junctionless transistors Yu R, Nazarov AN, Lysenko VS, Das S, Ferain I, Razavi P, Shayesteh M, Kranti A, Duffy R, Colinge JP Solid-State Electronics, 90, 28, 2013 |
| 5 |
Catalytic Carbene Insertion into C-H Bonds Doyle MP, Duffy R, Ratnikov M, Zhou L Chemical Reviews, 110(2), 704, 2010 |
| 6 |
Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm Pelaz L, Marques LA, Aboy M, Santos I, Lopez P, Duffy R Journal of Vacuum Science & Technology B, 28(1), C1A1, 2010 |
| 7 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W Journal of Vacuum Science & Technology B, 28(1), C1H5, 2010 |
| 8 |
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (vol 28, pg C1H5, 2010) Mody J, Duffy R, Eyben P, Goossens J, Moussa A, Polspoel W, Berghmans B, van Dal MJH, Pawlak BJ, Kaiser M, Weemaes RGR, Vandervorst W Journal of Vacuum Science & Technology B, 28(3), 648, 2010 |
| 9 |
Quantitative prediction of junction leakage in bulk-technology CMOS devices Duffy R, Heringa A, Venezia VC, Loo J, Verheijen MA, Hopstaken MJP, van der Tak K, de Potter M, Hooker JC, Meunier-Beillard P, Delhougne R Solid-State Electronics, 54(3), 243, 2010 |
| 10 |
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering Ferain I, Duffy R, Collaert N, van Dal MJH, Pawlak BJ, O'Sullivan B, Witters L, Rooyackers R, Conard T, Popovici M, van Elshocht S, Kaiser M, Weemaes RGR, Swerts J, Jurczak M, Lander RJP, De Meyer K Solid-State Electronics, 53(7), 760, 2009 |