화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Growth of heterostructures on InAs for high mobility device applications
Contreras-Guerrero R, Wang S, Edirisooriya M, Priyantha W, Rojas-Ramirez JS, Bhuwalka K, Doornbos G, Holland M, Oxland R, Vellianitis G, Van Dal M, Duriez B, Passlack M, Diaz CH, Droopad R
Journal of Crystal Growth, 378, 117, 2013
2 High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates
Vellianitis G, van Dal MJH, Duriez B, Lee TL, Passlack M, Wann CH, Diaz CH
Journal of Crystal Growth, 383, 9, 2013
3 65 nm LP/GP mix low cost platform for multi-media wireless and consumer applications
Tavel B, Duriez B, Gwoziecki R, Basso MT, Julien C, Ortolland C, Laplanche Y, Fox R, Sabouret E, Detcheverry C, Boeuf F, Morin P, Barge D, Bidaud M, Bienacel J, Garnier P, Cooper K, Chapon JD, Trouiller Y, Belledent J, Broekaart M, Gouraud P, Denais M, Huard V, Rochereau K, Difrenza R, Planes N, Marin M, Boret S, Gloria D, Vanbergue S, Abramowitz P, Vishnubhotla L, Reber D, Stolk P, Woo M, Arnaud F
Solid-State Electronics, 50(4), 573, 2006