검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Dwikusuma F, Mayer J, Kuech TF Journal of Crystal Growth, 258(1-2), 65, 2003 |
| 2 |
Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments Dwikusuma F, Saulys D, Kuech TF Journal of the Electrochemical Society, 149(11), G603, 2002 |
| 3 |
The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy Gu SL, Zhang R, Shi Y, Zheng YD, Zhang L, Dwikusuma F, Kuech TF Journal of Crystal Growth, 231(3), 342, 2001 |