1 |
Low-temperature deposition of SiNx, SiOxNy, and SiOx films from plasma discharge of SiH4 for polycarbonate glazing applications Lee SE, Park YC Thin Solid Films, 636, 34, 2017 |
2 |
Influence of Ar/H-2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition Zhang XY, Wu AM, Shi SF, Qin FW, Bian JM Thin Solid Films, 521, 181, 2012 |
3 |
Deposition of a-C:H films on UHMWPE substrate and its wear-resistance Xie D, Liu HJ, Deng XR, Leng YX, Huang N Applied Surface Science, 256(1), 284, 2009 |
4 |
Silicon oxynitride ECR-PECVD films for integrated optics Pernas PL, Ruiz E, Garrido J, Piqueras J, Paszti F, Climent-Font A, Lifante G, Cantelar E Materials Science Forum, 480, 149, 2005 |
5 |
Deposition of SiO2 and SiO2 : Ge films for optical applications in a matrix distributed electron cyclotron resonance reactor Daineka D, Bulkin P, Girard G, Bouree JE Materials Science Forum, 455-456, 25, 2004 |
6 |
Heteroepitaxy of 3C-SiC by electron cyclotron resonance-CVD technique Mandracci P, Chiodoni A, Cicero G, Ferrero S, Giorgis F, Pirri CF, Barucca G, Musumeci P, Reitano R Applied Surface Science, 184(1-4), 43, 2001 |
7 |
Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH4, SiF4 and O-2 Byun KM, Lee WJ Thin Solid Films, 376(1-2), 26, 2000 |