검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Podlipskas Z, Aleksiejunas R, Nargelas S, Jurkevicius J, Mickevicius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang JW, Gaska R Current Applied Physics, 16(6), 633, 2016 |
| 2 |
The influence of substrate etched on the quality of GaN epilayers Mei JP, Xie XJ, Hao QY, Jing WN, Liu CC Applied Surface Science, 257(16), 7217, 2011 |
| 3 |
Surface characterization of AlGaN grown on Si (111) substrates Pan X, Wang XL, Xiao HL, Wang CM, Feng C, Jiang LJ, Yin HB, Chen H Journal of Crystal Growth, 331(1), 29, 2011 |
| 4 |
Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films Chang YM, Dai CL, Cheng TC, Hsu CW Applied Surface Science, 254(10), 3105, 2008 |
| 5 |
Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayers Ohno Y, Shoda K, Taishi T, Yonenaga I, Takeda S Applied Surface Science, 254(23), 7633, 2008 |
| 6 |
Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate Park YM, Andre R, Kasprzak J, Dang LS, Bellet-Amalric E Applied Surface Science, 253(16), 6946, 2007 |
| 7 |
펄스 레이저 증착법에 의한 ZnO:Li 박막 성장과 열처리 효과 홍광준 Korean Journal of Materials Research, 15(5), 293, 2005 |
| 8 |
Surface preparation of 6H-silicon carbide substrates for growth of high-quality SiC epilayers Lee KS, Lee SH, Kim M, Nahm KS Materials Science Forum, 457-460, 797, 2004 |
| 9 |
Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers Jacobson H, Yakimova R, Syvajarvi M, Kakanakova-Georgieva A, Tuomi T, Janzen E Journal of Crystal Growth, 256(3-4), 276, 2003 |
| 10 |
The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates Kang TW, Park CS, Kim TW Applied Surface Science, 180(1-2), 81, 2001 |