검색결과 : 39건
| No. | Article |
|---|---|
| 1 |
Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth Jang YC, Roh HJ, Park S, Jeong S, Ryu S, Kwon JW, Kim NK, Kim GH Current Applied Physics, 19(10), 1068, 2019 |
| 2 |
Etching Kinetics and Mechanisms of SiC Thin Films in F-, Cl- and Br-Based Plasma Chemistries Lee BJ, Efremov A, Lee J, Kwon KH Plasma Chemistry and Plasma Processing, 39(1), 325, 2019 |
| 3 |
Bi-stage time evolution of nano-morphology on inductively coupled plasma etched fused silica surface caused by surface morphological transformation Jiang XL, Zhang LJ, Bai Y, Liu Y, Liu ZK, Qiu KQ, Liao W, Zhang CC, Yang K, Chen J, Jiang YL, Yuan XD Applied Surface Science, 409, 156, 2017 |
| 4 |
Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications Gul B, Rehman AU Plasma Chemistry and Plasma Processing, 36(5), 1363, 2016 |
| 5 |
Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer Jiang XL, Liu Y, Liu ZK, Qiu KQ, Xu XD, Hong YL, Fu SJ Applied Surface Science, 355, 1180, 2015 |
| 6 |
Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring Barzen L, Kleinschmidt AK, Strassner J, Doering C, Fouckhardt H, Bock W, Wahl M, Kopnarski M Applied Surface Science, 357, 530, 2015 |
| 7 |
Study of CNTs structural evolution during water assisted growth and transfer methodology for electrochemical applications Hussain S, Amade R, Bertran E Materials Chemistry and Physics, 148(3), 914, 2014 |
| 8 |
Hydrogen etching of Si3N4 layers with plasma assisted hot wire CVD Kniffler N, Pflueger A, Schulz T, Sommer S, Schroeder B Thin Solid Films, 519(14), 4582, 2011 |
| 9 |
Parameter study for silicon grass formation in Bosch process Jung K, Song W, Lim HW, Lee CS Journal of Vacuum Science & Technology B, 28(1), 143, 2010 |
| 10 |
SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS Shamiryan D, Baklanov M, Claes M, Boullart W, Paraschiv V Chemical Engineering Communications, 196(12), 1475, 2009 |