| 1 |
Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4+CHF3+O-2 Inductively Coupled Plasma
Lee J, Kim J, Efremov A, Kim C, Lee HW, Kwon KH
Plasma Chemistry and Plasma Processing, 39(4), 1127, 2019 |
| 2 |
Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma
Lim N, Efremov A, Kwon KH
Thin Solid Films, 685, 97, 2019 |
| 3 |
Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
Shin D, Song H, Lee M, Park H, Ko DH
Thin Solid Films, 660, 572, 2018 |
| 4 |
On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N-2/Ar Inductively Coupled Plasma
Lee J, Efremov A, Kim K, Kwon KH
Plasma Chemistry and Plasma Processing, 37(2), 489, 2017 |
| 5 |
Inductively coupled plasma etching of GaAs in Cl-2/Ar, Cl-2/Ar/O-2 chemistries with photoresist mask
Liu K, Ren XM, Huang YQ, Cai SW, Duan XF, Wang Q, Kang C, Li JS, Chen QT, Fei JR
Applied Surface Science, 356, 776, 2015 |
| 6 |
Laser induced damage characteristics of fused silica optics treated by wet chemical processes
Ye H, Li YG, Yuan ZG, Wang J, Yang W, Xu Q
Applied Surface Science, 357, 498, 2015 |
| 7 |
Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching
Yang DC, Liang HW, Qiu Y, Shen RS, Liu Y, Xia XC, Song SW, Zhang KX, Yu ZN, Zhang YT, Du GT
Applied Surface Science, 295, 26, 2014 |
| 8 |
Dry etching characteristics of Mo and Al2O3 films in O-2/Cl-2/Ar inductively coupled plasmas
Kwon KH, Efremov A, Yun SJ, Chun I, Kim K
Thin Solid Films, 552, 105, 2014 |
| 9 |
Influence of jet-to-substrate distance on plasma etching of polyamide 6 films with atmospheric pressure plasma
Gao ZQ
Applied Surface Science, 257(7), 2531, 2011 |
| 10 |
Modification of surface properties of polyamide 6 films with atmospheric pressure plasma
Gao ZQ
Applied Surface Science, 257(14), 6068, 2011 |
