화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy
Lee JH, Luo G, Tung IC, Chang SH, Luo Z, Malshe M, Gadre M, Bhattacharya A, Nakhmanson SM, Eastman JA, Hong H, Jellinek J, Morgan D, Fong DD, Freeland JW
Nature Materials, 13(9), 879, 2014
2 Atomic Layer Engineering of Perovskite Oxides for Chemically Sharp Heterointerfaces
Choi WS, Rouleau CM, Seo SSA, Luo ZL, Zhou H, Fister TT, Eastman JA, Fuoss PH, Fong DD, Tischler JZ, Eres G, Chisholm MF, Lee HN
Advanced Materials, 24(48), 6423, 2012
3 In situ X-ray studies of metal organic chemical vapor deposition of PbZ(x)Ti(1-x)O(3)
Wang RV, Jiang F, Fong DD, Stephenson GB, Fuoss PH, Eastman JA, Streiffer SK, Latifi K, Thompson C
Thin Solid Films, 515(14), 5593, 2007
4 Effect of liquid layering at the liquid-solid interface on thermal transport
Xue L, Keblinski P, Phillpot SR, Choi SUS, Eastman JA
International Journal of Heat and Mass Transfer, 47(19-20), 4277, 2004
5 Two regimes of thermal resistance at a liquid-solid interface
Xue L, Keblinski P, Phillpot SR, Choi SUS, Eastman JA
Journal of Chemical Physics, 118(1), 337, 2003
6 Mechanisms of heat flow in suspensions of nano-sized particles (nanofluids)
Keblinski P, Phillpot SR, Choi SUS, Eastman JA
International Journal of Heat and Mass Transfer, 45(4), 855, 2002
7 Investigations of chemical vapor deposition of GaN using synchrotron radiation
Thompson C, Stephenson GB, Eastman JA, Munkholm A, Auciello O, Murty MVR, Fini P, DenBaars SP, Speck JS
Journal of the Electrochemical Society, 148(5), C390, 2001
8 In situ studies of the effect of silicon on GaN growth modes
Munkholm A, Stephenson GB, Eastman JA, Auciello O, Murty MVR, Thompson C, Fini P, Speck JS, DenBaars SP
Journal of Crystal Growth, 221, 98, 2000