| 1 |
Modeling and analysis of the effects of inhomogeneous carrier distributions in InGaN multiple quantum wells
Ryu HY
Current Applied Physics, 20(12), 1351, 2020 |
| 2 |
Modeling and simulation of efficiency droop in GaN-based blue light-emitting diodes incorporating the effect of reduced active volume of InGaN quantum wells
Ryu HY, Ryu GH, Choi YH, Ma B
Current Applied Physics, 17(10), 1298, 2017 |
| 3 |
P형 GaN 중간층이 삽입된 녹색 발광다이오드 특성 평가
김은진, 김지민, 장수환
Korean Chemical Engineering Research, 54(2), 274, 2016 |
| 4 |
Effect of p-AlGaN electron blocking layers on the injection and radiative efficiencies in InGaN/GaN light emitting diodes
Oh NC, Lee JG, Dong Y, Kim TS, Yu HJ, Song JH
Current Applied Physics, 15, S7, 2015 |
| 5 |
The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes
Lin GB, Zhang XG, Lee SM, Papasouliotis G, Kim JK, Schubert EF, Cho J
Current Applied Physics, 15(10), 1222, 2015 |
| 6 |
Research on efficiency droop mechanism and improvement in AlGaInP Ultra-High-Brightness LEDs using the transient measurement method
Huang CF, Su YF, Lin CB, Chiang KN
Solid-State Electronics, 93, 15, 2014 |
| 7 |
Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429-467 nm
Jung E, Kim S, Kim H
Current Applied Physics, 12(3), 885, 2012 |
| 8 |
Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
Shao XJ, Yan DW, Lu H, Chen DJ, Zhang R, Zheng YD
Solid-State Electronics, 57(1), 9, 2011 |
| 9 |
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Zhao HP, Liu GY, Arif RA, Tansu N
Solid-State Electronics, 54(10), 1119, 2010 |
