| 1 |
Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries
Lim N, Efremov A, Hwang HG, Nahm S, Kwon KH
Plasma Chemistry and Plasma Processing, 40(2), 625, 2020 |
| 2 |
Plasma Parameters and Silicon Etching Kinetics in C4F8 + O-2 + Ar Gas Mixture: Effect of Component Mixing Ratios
Lee BJ, Efremov A, Nam Y, Kwon KH
Plasma Chemistry and Plasma Processing, 40(5), 1365, 2020 |
| 3 |
Etching Kinetics and Mechanisms of SiC Thin Films in F-, Cl- and Br-Based Plasma Chemistries
Lee BJ, Efremov A, Lee J, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 325, 2019 |
| 4 |
Peculiarities of Si and SiO2 Etching Kinetics in HBr+Cl-2+O-2 Inductively Coupled Plasma
Lee BJ, Efremov A, Kim J, Kim C, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 339, 2019 |
| 5 |
Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4+CHF3+O-2 Inductively Coupled Plasma
Lee J, Kim J, Efremov A, Kim C, Lee HW, Kwon KH
Plasma Chemistry and Plasma Processing, 39(4), 1127, 2019 |
| 6 |
Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma
Lim N, Efremov A, Kwon KH
Thin Solid Films, 685, 97, 2019 |
| 7 |
Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl-2 + Ar inductively coupled plasma with various HBr/Cl-2 mixing ratios
Kim C, Efremov A, Lee J, Han IK, Kim YH, Kwon KH
Thin Solid Films, 660, 590, 2018 |
| 8 |
On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N-2/Ar Inductively Coupled Plasma
Lee J, Efremov A, Kim K, Kwon KH
Plasma Chemistry and Plasma Processing, 37(2), 489, 2017 |
| 9 |
On the Control of Plasma Parameters and Active Species Kinetics in CF4 + O-2 + Ar Gas Mixture by CF4/O-2 and O-2/Ar Mixing Ratios
Efremov A, Lee J, Kim J
Plasma Chemistry and Plasma Processing, 37(5), 1445, 2017 |
| 10 |
A comparative study of CF4, Cl-2 and HBr + Ar inductively coupled plasmas for dry etching applications
Efremov A, Lee J, Kwon KH
Thin Solid Films, 629, 39, 2017 |
