화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Formation of linear InAs/InGaAsP/InP (100) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy
Sritirawisarn N, van Otten FWM, Eijkemans TJ, Notzel R
Journal of Crystal Growth, 311(7), 1822, 2009
2 Stacking, polarization control, and lasing (1.55 mu m region) InAs/InGaAsP/InP (100) quantum dots
Anantathanasarn S, Notzel R, van Veldhoven PJ, van Otten FWM, Eijkemans TJ, Barbarin Y, de Vries T, Smalbrugge E, Geluk EJ, Bente E, Oei YS, Smit MK, Wolter JH
Journal of Crystal Growth, 298, 553, 2007
3 Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)
Sritirawisarn N, van Otten FWM, Eijkemans TJ, Notzel R
Journal of Crystal Growth, 305(1), 63, 2007
4 Wavelength tuning of InAs/InP quantum dots: Control of As/P surface exchange reaction
Notzel R, Anantathanasarn S, van Veldhoven PJ, van Otten FWM, Eijkemans TJ, Trampert A, Satpati B, Wolter JH
Journal of Vacuum Science & Technology B, 24(4), 2075, 2006
5 Shape transition from InAs quantum dash to quantum dot on InP(311)A
Gong Q, Notzel R, van Veldhoven PJ, Eijkemans TJ, Wolter JH
Journal of Crystal Growth, 280(3-4), 413, 2005
6 Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy
Zhan HH, Notzel R, Hamhuis GJ, Eijkemans TJ, Wolter JH
Journal of Crystal Growth, 251(1-4), 135, 2003
7 Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formation
Mano T, Notzel R, Hamhuis GJ, Eijkemans TJ, Wolter JH
Journal of Crystal Growth, 251(1-4), 264, 2003