검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Prediction of recrystallization times in electroplated copper thin films Treger M, Witt C, Cabral C, Murray C, Jordan-Sweet J, Rosenberg R, Eisenbraun E, Noyan IC Thin Solid Films, 615, 107, 2016 |
| 2 |
Hydridosilane Modification of Metals: An Exploratory Study Arkles B, Pan YL, Kim YM, Eisenbraun E, Miller C, Kaloyeros AE Journal of Adhesion Science and Technology, 26(1-3), 41, 2011 |
| 3 |
Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications Wu L, Eisenbraun E Journal of the Electrochemical Society, 156(9), H734, 2009 |
| 4 |
Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications Greenslit D, Chakraborty T, Eisenbraun E Journal of Vacuum Science & Technology B, 27(2), 631, 2009 |
| 5 |
Effects of hydrogen plasma treatments on the atomic layer deposition of copper Wu L, Eisenbraun E Electrochemical and Solid State Letters, 11(5), H107, 2008 |
| 6 |
High aspect ratio Bosch etching of sub-0.25 mu m trenches for hyperintegration applications Wang X, Zeng W, Lu G, Russo OL, Eisenbraun E Journal of Vacuum Science & Technology B, 25(4), 1376, 2007 |
| 7 |
Hydrogen plasma-enhanced atomic layer deposition of copper thin films Wu L, Eisenbraun E Journal of Vacuum Science & Technology B, 25(6), 2581, 2007 |
| 8 |
CVD of tantalum oxide dielectric thin films for nanoscale device applications Zeng WX, Eisenbraun E, Frisch H, Sullivan JJ, Kaloyeros AE, Margalit J, Beck K Journal of the Electrochemical Society, 151(8), F172, 2004 |
| 9 |
Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications Eisenbraun E, Upham A, Dash R, Zeng WX, Hoefnagels J, Lane S, Anjum D, Dovidenko K, Kaloyeros A, Arkles B, Sullivan JJ Journal of Vacuum Science & Technology B, 18(4), 2011, 2000 |