검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy Haugan HJ, Cain AM, Haas TW, Eyink KG, Eiting CJ, Tomich DH, Grazulis L, Busbee JD Journal of Vacuum Science & Technology A, 21(1), 110, 2003 |
| 2 |
Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C-60 and Si effusion cells Lampert WV, Eiting CJ, Smith SA, Mahalingam K, Grazulis L, Haas TW Journal of Crystal Growth, 234(2-3), 369, 2002 |
| 3 |
Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching and an ultrasonic treatment Shelton BS, Zhu TG, Wong MM, Kwon HK, Eiting CJ, Lambert DJH, Turini SP, Dupuis RD Electrochemical and Solid State Letters, 3(2), 87, 2000 |
| 4 |
Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition Kwon HK, Eiting CJ, Lambert DJH, Wong MM, Shelton BS, Zhu TG, Liliental-Weber Z, Benamura M, Dupuis RD Journal of Crystal Growth, 221, 240, 2000 |
| 5 |
Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu TG, Dupuis RD Journal of Crystal Growth, 221, 362, 2000 |
| 6 |
Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Shiojima K, Woodall JM, Eiting CJ, Grudowski PA, Dupuis RD Journal of Vacuum Science & Technology B, 17(5), 2030, 1999 |
| 7 |
Characteristics of Mg-Doped GaN Grown by Metallorganic Chemical-Vapor-Deposition Eiting CJ, Grudowski PA, Park J, Lambert DJ, Shelton BS, Dupuis RD Journal of the Electrochemical Society, 144(8), L219, 1997 |