검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters Cristoloveanu S, Lee KH, Parihar MS, El Dirani H, Lacord J, Martinie S, Le Royer C, Barbe JC, Mescot X, Fonteneau P, Galy P, Gamiz F, Navarro C, Cheng B, Duan M, Adamu-Lema F, Asenov A, Taur Y, Xu Y, Kim YT, Wan J, Bawedin M Solid-State Electronics, 143, 10, 2018 |
| 2 |
Insight into carrier lifetime impact on band-modulation devices Parihar MS, Lee KH, Park HJ, Lacord J, Martinie S, Barbe JC, Xu Y, El Dirani H, Taur Y, Cristoloveanu S, Bawedin M Solid-State Electronics, 143, 41, 2018 |
| 3 |
Sharp-switching band-modulation back-gated devices in advanced FDSOI technology El Dirani H, Fonteneau P, Solaro Y, Legrand CA, Marin-Cudraz D, Ferrari P, Cristoloveanu S Solid-State Electronics, 128, 180, 2017 |
| 4 |
Properties and mechanisms of Z(2)-FET at variable temperature El Dirani H, Solaro Y, Fonteneau P, Ferrari P, Cristoloveanu S Solid-State Electronics, 115, 201, 2016 |
| 5 |
A band-modulation device in advanced FDSOI technology: Sharp switching characteristics El Dirani H, Solaro Y, Fonteneau P, Legrand CA, Marin-Cudraz D, Golanski D, Ferrari P, Cristoloveanu S Solid-State Electronics, 125, 103, 2016 |