검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Improving InGaN heterojunction solar cells efficiency using a semibulk absorber Arif M, Elhuni W, Streque J, Sundaram S, Belahsene S, El Gmili Y, Jordan M, Li X, Patriarche G, Slaoui A, Migan A, Abderrahim R, Djebbour Z, Voss PL, Salvestrini JP, Ougazzaden A Solar Energy Materials and Solar Cells, 159, 405, 2017 |
| 2 |
Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree Bouazizi H, Chaaben N, El Gmili Y, Bchetnia A, Salvestrini JP, El Jani B Journal of Crystal Growth, 434, 72, 2016 |
| 3 |
Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO Pantzas K, Rogers DJ, Bove P, Sandana VE, Teherani FH, El Gmili Y, Molinari M, Patriarche G, Largeau L, Mauguin O, Suresh S, Voss PL, Razeghi M, Ougazzaden A Journal of Crystal Growth, 435, 105, 2016 |
| 4 |
MOVPE grown periodic AlN/BAIN heterostructure with high boron content Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Reveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A Journal of Crystal Growth, 414, 119, 2015 |
| 5 |
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Reveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, Ougazzaden A Journal of Crystal Growth, 432, 37, 2015 |
| 6 |
Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE Moudakir T, Gautier S, Suresh S, Abid M, El Gmili Y, Patriarche G, Pantzas K, Troadec D, Jacquet J, Genty F, Voss P, Ougazzaden A Journal of Crystal Growth, 370, 12, 2013 |
| 7 |
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Pantzas K, El Gmili Y, Dickerson J, Gautier S, Largeau L, Mauguin O, Patriarche G, Suresh S, Moudakir T, Bishop C, Ahaitouf A, Rivera T, Tanguy C, Voss PL, Ougazzaden A Journal of Crystal Growth, 370, 57, 2013 |
| 8 |
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Teherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A Journal of Crystal Growth, 370, 63, 2013 |
| 9 |
Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction Bonanno PL, Gautier S, El Gmili Y, Moudakir T, Sirenko AA, Kazimirov A, Cai ZH, Martin J, Goh WH, Martinez A, Ramdane A, Le Gratiet L, Maloufi N, Assouar MB, Ougazzaden A Thin Solid Films, 541, 46, 2013 |