1 |
Effect of evaporated copper and aluminum on post-annealed SiOC(-H) films deposited using plasma-enhanced chemical vapor deposition Kim CY, Lee HS, Navamathavan R, Woo JK, Choi CK Thin Solid Films, 518(22), 6469, 2010 |
2 |
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs Aleksic SM, Jaksic AB, Pejovic MM Solid-State Electronics, 52(8), 1197, 2008 |
3 |
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing Ristic GS, Pejovic MM, Jaksic AB Applied Surface Science, 252(8), 3023, 2006 |
4 |
Fowler-Nordheim high electric field stress of power VDMOSFETs Ristic GS, Pejovic MM, Jaksic AB Solid-State Electronics, 49(7), 1140, 2005 |
5 |
Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs Ristic GS, Pejovic MM, Jaksic AB Applied Surface Science, 220(1-4), 181, 2003 |
6 |
Effect of osmotic pretreatment and pulsed electric field on the viscoelastic properties of potato tissue Fincan M, Dejmek P Journal of Food Engineering, 59(2-3), 169, 2003 |