검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Selected fundamentals of catalysis and electrocatalysis in energy conversion reactions-A tutorial Roduner E Catalysis Today, 309, 263, 2018 |
| 2 |
Optimal process parameters for phosphorus spin-on-doping of germanium Boldrini V, Carturan SM, Maggioni G, Napolitani E, Napoli DR, Camattari R, De Salvador D Applied Surface Science, 392, 1173, 2017 |
| 3 |
A study on the electrical activation behavior of boron in Si thin film doped by IMD Lee YW, Lee SJ, Yun SJ, Joo SK Current Applied Physics, 11(4), S158, 2011 |
| 4 |
Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification Hong WE, Kim DH, Kim CW, Ro JS Thin Solid Films, 520(1), 616, 2011 |
| 5 |
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology Nguyen ND, Rosseel E, Takeuchi S, Everaert JL, Yang L, Goossens J, Moussa A, Clarysse T, Richard O, Bender H, Zaima S, Sakai A, Loo R, Lin JC, Vandervorst W, Caymax M Thin Solid Films, 518, S48, 2010 |
| 6 |
The solubility and defect equilibrium of the n-type dopants nitrogen and phosphorus in 4H-SiC: a theoretical study Bockstedte M, Mattausch A, Pankratov O Materials Science Forum, 457-460, 715, 2004 |
| 7 |
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G Materials Science Forum, 389-3, 827, 2002 |
| 8 |
Electrical activation of ion-implanted nitrogen and aluminum in 4H-SiC by excimer laser annealing Tanaka Y, Tanoue H, Arai K Materials Science Forum, 433-4, 605, 2002 |
| 9 |
High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Morvan E, Godignon P, Skorupa W, Chantel JP Materials Science Forum, 353-356, 571, 2001 |
| 10 |
Enhancement of electrical activation of aluminum accepters in 6H-SiC by co-implantation of carbon ions Ohshima T, Itoh H, Yoshikawa M Materials Science Forum, 353-356, 575, 2001 |