화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Si doping mechanism in Si doped GaAsN
Tsukasaki T, Hiyoshi R, Fujita M, Makimoto T
Journal of Crystal Growth, 514, 45, 2019
2 Electrochemical modification of the optical and electrical properties of Cd-rich NixCd1-xO alloys
Ristova MM, Francis C, Toma FM, Yu KM, Walukiewicz W
Solar Energy Materials and Solar Cells, 147, 127, 2016
3 Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S
Journal of Crystal Growth, 432, 49, 2015
4 Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition
Yuan TT, Kuei PY, Hsieh LZ, Li TC, Lin WJ
Journal of Crystal Growth, 312(15), 2239, 2010
5 The effect of AlN buffer layer on properties of AlxIn1-xN films on glass substates
Yeh TS, Wu JM, Lan WH
Thin Solid Films, 517(11), 3204, 2009
6 Relationship between ultraviolet emission and electron concentration of ZnO thin films
Kang HS, Kim GH, Lim SH, Chang HW, Kim JH, Lee SY
Thin Solid Films, 516(10), 3147, 2008
7 Morphological and electrical properties of InP grown by solid source molecular beam epitaxy
Pi B, Shu YC, Lin YW, Sun JM, Qu SC, Yao JH, Xing XD, Xu B, Shu Q, Wang ZG, Xu J
Journal of Crystal Growth, 299(2), 243, 2007
8 Theoretical analysis of electron statistics for n-type diamond
Koide Y
Materials Science Forum, 475-479, 1719, 2005
9 Formation and optimization of Cu-based Cu-Zr-Al bulk metallic glasses
Wang Q, Qiang JB, Wang YM, Xia JH, Zhang XF, Dong C
Materials Science Forum, 475-479, 3381, 2005
10 Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphorus ions
Ohshima T, Uedono A, Itoh H, Yoshikawa M, Kojima K, Okada S, Nashiyama I, Abe K, Tanigawa S, Frank T, Pensl G
Materials Science Forum, 338-3, 857, 2000