검색결과 : 10건
No. | Article |
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1 |
Si doping mechanism in Si doped GaAsN Tsukasaki T, Hiyoshi R, Fujita M, Makimoto T Journal of Crystal Growth, 514, 45, 2019 |
2 |
Electrochemical modification of the optical and electrical properties of Cd-rich NixCd1-xO alloys Ristova MM, Francis C, Toma FM, Yu KM, Walukiewicz W Solar Energy Materials and Solar Cells, 147, 127, 2016 |
3 |
Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S Journal of Crystal Growth, 432, 49, 2015 |
4 |
Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition Yuan TT, Kuei PY, Hsieh LZ, Li TC, Lin WJ Journal of Crystal Growth, 312(15), 2239, 2010 |
5 |
The effect of AlN buffer layer on properties of AlxIn1-xN films on glass substates Yeh TS, Wu JM, Lan WH Thin Solid Films, 517(11), 3204, 2009 |
6 |
Relationship between ultraviolet emission and electron concentration of ZnO thin films Kang HS, Kim GH, Lim SH, Chang HW, Kim JH, Lee SY Thin Solid Films, 516(10), 3147, 2008 |
7 |
Morphological and electrical properties of InP grown by solid source molecular beam epitaxy Pi B, Shu YC, Lin YW, Sun JM, Qu SC, Yao JH, Xing XD, Xu B, Shu Q, Wang ZG, Xu J Journal of Crystal Growth, 299(2), 243, 2007 |
8 |
Theoretical analysis of electron statistics for n-type diamond Koide Y Materials Science Forum, 475-479, 1719, 2005 |
9 |
Formation and optimization of Cu-based Cu-Zr-Al bulk metallic glasses Wang Q, Qiang JB, Wang YM, Xia JH, Zhang XF, Dong C Materials Science Forum, 475-479, 3381, 2005 |
10 |
Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphorus ions Ohshima T, Uedono A, Itoh H, Yoshikawa M, Kojima K, Okada S, Nashiyama I, Abe K, Tanigawa S, Frank T, Pensl G Materials Science Forum, 338-3, 857, 2000 |