| 1 |
Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process
Wang WH, Jin H, Dong SR, Zhong L, Han Y
Solid-State Electronics, 116, 80, 2016 |
| 2 |
Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology
Lin CY, Chiu YL
Solid-State Electronics, 124, 28, 2016 |
| 3 |
Evaluating the CDM-Robustness of the input buffer with very fast transmission line pulse
Kao TC, Lee JH, Hung CY, Lien CH, Su HD
Solid-State Electronics, 104, 12, 2015 |
| 4 |
A novel area-efficiency multi-finger GGnMOS with high ESD robustness
Zhang CW, Liu SY, Sun WF, Shi LX
Solid-State Electronics, 114, 131, 2015 |
| 5 |
Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel-Poon models
Lou LF, Liou JJ, Dong SR, Han Y
Solid-State Electronics, 53(2), 195, 2009 |
| 6 |
Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor
Chuang RW, Tsai PC, Su YX, Chu CH
Solid-State Electronics, 52(7), 1043, 2008 |
| 7 |
ESD protection design for I/O libraries in advanced CMOS technologies
Semenov O, Somov S
Solid-State Electronics, 52(8), 1127, 2008 |
