검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Direct experimental comparison of the effects of electron irradiation on the charge carrier removal rate in n-type silicon and silicon carbide Kozlovski VV, Bogdanova EV, Emtsev VV, Emtsev KV, Lebedev AA, Lomasov VN Materials Science Forum, 483, 385, 2005 |
| 2 |
Electron traps in undoped GaN layers subjected to gamma-irradiation and annealing Davydov DV, Emtsev VV, Lebedev AA, Lundin WV, Poloskin DS, Shmidt NM, Usikov AS, Zavarin EE Materials Science Forum, 353-356, 799, 2001 |
| 3 |
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films Emtsev VV, Davydov VY, Lundin VV, Poloskin DS, Aderhold J, Klausing H, Mistele D, Rotter T, Stemmer J, Fedler F, Semchinova O, Graul J Journal of Crystal Growth, 210(1-3), 273, 2000 |