검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Simulation of the substrate current in MOSFETs using a unified model for the Auger generation and recombination rate Ishihara T, Enda T, Matsuzawa K Solid-State Electronics, 48(3), 453, 2004 |
| 2 |
Mesh related problems in device simulation: Treatments of meshing noise and leakage current Shigyo N, Tanimoto H, Enda T Solid-State Electronics, 44(1), 11, 2000 |