검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
MOVPE growth of laser structures for high-power applications at different ambient temperatures Bugge F, Crump P, Frevert C, Knigge S, Wenzel H, Erbert G, Weyers M Journal of Crystal Growth, 452, 258, 2016 |
| 2 |
Combined Mg/Zn p-type doping for AlGaInP laser diodes Pohl J, Bugge F, Blume G, Knigge A, Knigge S, Erbert G, Weyers M Journal of Crystal Growth, 414, 215, 2015 |
| 3 |
In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers Maassdorf A, Schultz CM, Brox O, Wenzel H, Crump P, Bugge F, Mogilatenko A, Erbert G, Weyers M, Trankle G Journal of Crystal Growth, 370, 226, 2013 |
| 4 |
Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes Bugge F, Mogilatenko A, Zeimer U, Brox O, Neumann W, Erbert G, Weyers M Journal of Crystal Growth, 315(1), 74, 2011 |
| 5 |
MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy Bugge F, Zorn M, Zeimer U, Pietrzak A, Erbert G, Weyers M Journal of Crystal Growth, 311(4), 1065, 2009 |
| 6 |
Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes Kaspari C, Zorn M, Weyers M, Erbert G Journal of Crystal Growth, 310(23), 5175, 2008 |
| 7 |
MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs Bugge F, Zeimer U, Staske R, Sumpf B, Erbert G, Weyers M Journal of Crystal Growth, 298, 652, 2007 |
| 8 |
High-power red laser diodes grown by MOVPE Zorn M, Wenzel H, Zeimer U, Sumpf B, Erbert G, Weyers M Journal of Crystal Growth, 298, 667, 2007 |
| 9 |
Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications Bugge F, Zeimer U, Wenzel H, Erbert G, Weyers M Journal of Crystal Growth, 272(1-4), 531, 2004 |
| 10 |
Highly strained very high-power laser diodes with InGaAs QWs Bugge F, Zorn M, Zeimer U, Sharma T, Kissel H, Hulsewede R, Erbert G, Weyers M Journal of Crystal Growth, 248, 354, 2003 |