| 1 |
Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study
Ono K, Ohta H, Eriguchi K
Thin Solid Films, 518(13), 3461, 2010 |
| 2 |
Bias frequency dependence of pn junction charging damage induced by plasma processing
Kamei M, Nakakubo Y, Eriguchi K, Ono K
Thin Solid Films, 518(13), 3469, 2010 |
| 3 |
Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue
Tsuda H, Mori M, Takao Y, Eriguchi K, Ono K
Thin Solid Films, 518(13), 3475, 2010 |
| 4 |
Modeling of ion-bombardment damage on Si surfaces for in-line analysis
Matsuda A, Nakakubo Y, Takao Y, Eriguchi K, Ono K
Thin Solid Films, 518(13), 3481, 2010 |
| 5 |
Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (111)Si substrates
Komiyama J, Eriguchi K, Abe Y, Suzuki S, Nakanishi H, Yamane T, Murakami H, Koukitu A
Journal of Crystal Growth, 310(1), 96, 2008 |
| 6 |
Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy
Murakami H, Eriguchi K, Torii J, Cho HC, Kumagai Y, Koukitu A
Journal of Crystal Growth, 310(7-9), 1602, 2008 |
| 7 |
High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy
Eriguchi K, Hiratsuka T, Murakami H, Kumagai Y, Koukitu A
Journal of Crystal Growth, 310(17), 4016, 2008 |
| 8 |
Estimation of defect generation probability in thin Si surface damaged layer during plasma processing
Eriguchi K, Ohno A, Hamada D, Kamei M, Ono K
Thin Solid Films, 516(19), 6604, 2008 |
| 9 |
Comparison of thermal and plasma oxidations for HfO2/Si interface
Hayashi S, Yamamoto K, Harada Y, Mitsuhashi R, Eriguchi K, Kubota M, Niwa M
Applied Surface Science, 216(1-4), 228, 2003 |
