검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures Esteve R, Reshanov SA, Savage S, Bakowski M, Kaplan W, Persson S, Schoner A, Zetterling CM Journal of the Electrochemical Society, 158(5), H496, 2011 |
| 2 |
MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001) Lorenzzi J, Esteve R, Jegenyes N, Reshanov SA, Schoner A, Ferro G Journal of the Electrochemical Society, 158(6), H630, 2011 |