| 1 |
Diamond-like amorphous carbon layer film by an inductively coupled plasma system for next generation etching hard mask
Park SJ, Kim D, Lee S, Ha Y, Lim M, Kim K
Thin Solid Films, 663, 21, 2018 |
| 2 |
Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films
Park JC, Jeong OG, Kim JK, Yun YH, Pearton SJ, Cho H
Thin Solid Films, 546, 136, 2013 |
| 3 |
Low temperature Si:C co-flow and hybrid process using Si3H8/Cl-2
Bauer M, Thomas SG
Thin Solid Films, 520(8), 3133, 2012 |
| 4 |
The effects of gas flow rates on the etch characteristics of silicon nitride with an extreme ultra-violet resist pattern in CH2F2/N-2/Ar capacitively coupled plasmas
Kwon BS, Lee JH, Lee NE
Thin Solid Films, 519(20), 6741, 2011 |
| 5 |
Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl-2/O-2 Neutral Beam
Park BJ, Yeon JK, Lim WS, Kang SK, Bae JW, Yeom GY, Jhon MS, Shin SH, Chang KS, Song JI, Lee YT, Jang JH
Plasma Chemistry and Plasma Processing, 30(5), 633, 2010 |
| 6 |
Infinitely high etch selectivity during CH4/H-2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask
Kim DY, Ko JH, Park MS, Lee NE
Thin Solid Films, 516(11), 3512, 2008 |
| 7 |
고밀도 CHF3 플라즈마에서 바이어스 전압과 이온의 입사각이 Photoresist의 식각에 미치는 영향
강세구, 민재호, 이진관, 문상흡
Korean Chemical Engineering Research, 44(5), 498, 2006 |
| 8 |
Co/Ni 복합실리사이드의 메탈 콘택 건식식각 안정성 연구
송오성, 범성진, 김득중
Korean Journal of Materials Research, 14(8), 573, 2004 |
