| 1 |
Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD
Tian S, Li HJ, Zhang YL, Zhang SY, Wang YJ, Ren JC, Qiang XF
Journal of Crystal Growth, 384, 44, 2013 |
| 2 |
Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition
Hamidinezhad H, Wahab Y, Othaman Z, Ismail A
Applied Surface Science, 257(21), 9188, 2011 |
| 3 |
Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si(2)H(6)
Akhtar S, Tanaka A, Usami K, Tsuchiya Y, Oda S
Thin Solid Films, 517(1), 317, 2008 |
| 4 |
Comparison of the properties of porous silicon films with different back contacts (Ag, Al) for possible photovoltaic applications
Priyanka, Sharma SN, Salam S, Husain M, Lal M
Solar Energy Materials and Solar Cells, 91(15-16), 1510, 2007 |
| 5 |
Melting point lowering of thin metal films (Me = In, Sn, Bi, Pb) in Al/Me/Al film system
Gladkikh NT, Bogatyrenko SI, Kryshtal AP, Anton R
Applied Surface Science, 219(3-4), 338, 2003 |
