화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors
Chang ACK, Ross IM, Norris DJ, Cullis AG, Tang YT, Cerrina C, Evans AGR
Thin Solid Films, 496(2), 306, 2006
2 Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy
Waite AM, Lloyd NS, Osman K, Zhang W, Ernst T, Achard H, Wang Y, Deleonibus S, Hernment PLF, Bagnall DM, Evans AGR, Ashburn P
Solid-State Electronics, 49(4), 529, 2005
3 On the mobility extraction for HMOSFETs
Straube UN, Evans AGR, Braithwaite G, Kaya S, Watling J, Asenov A
Solid-State Electronics, 45(3), 527, 2001