검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM Journal of Crystal Growth, 387, 16, 2014 |
| 2 |
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ Journal of Crystal Growth, 380, 14, 2013 |
| 3 |
Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates Liu GY, Zhang J, Li XH, Huang GS, Paskova T, Evans KR, Zhao HP, Tansu N Journal of Crystal Growth, 340(1), 66, 2012 |
| 4 |
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth Lai KY, Paskova T, Wheeler VD, Grenko JA, Johnson MAL, Udwary K, Preble EA, Evans KR Journal of Crystal Growth, 312(7), 902, 2010 |
| 5 |
InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Wu M, Leach JH, Ni X, Li X, Xie J, Dogan S, Ozgur U, Morkoc H, Paskova T, Preble E, Evans KR, Lu CZ Journal of Vacuum Science & Technology B, 28(5), 908, 2010 |
| 6 |
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR Solid-State Electronics, 54(11), 1470, 2010 |
| 7 |
Fabrication and characterization of native non-polar GaN substrates Hanser D, Liu L, Preble EA, Udwary K, Paskova T, Evans KR Journal of Crystal Growth, 310(17), 3953, 2008 |
| 8 |
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Hanser D, Preble EA, Evans KR Journal of Crystal Growth, 301, 429, 2007 |
| 9 |
Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Zhou L, Smith DJ, Hanser D, Preble EA, Evans KR Journal of Crystal Growth, 305(2), 340, 2007 |
| 10 |
Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Evans KR Journal of Vacuum Science & Technology B, 16(3), 1269, 1998 |