화학공학소재연구정보센터
검색결과 : 35건
No. Article
1 Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model
Trojman L, Ragnarsson LA, Collaert N
Solid-State Electronics, 154, 24, 2019
2 28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures
Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V
Solid-State Electronics, 159, 77, 2019
3 Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
Beckers A, Jazaeri F, Bohuslayskyi H, Hutin L, De Franceschi S, Enz C
Solid-State Electronics, 159, 106, 2019
4 Kink effect in ultrathin FDSOI MOSFETs
Park HJ, Bawedin M, Choi HG, Cristoloveanu S
Solid-State Electronics, 143, 33, 2018
5 Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology
Berthelon R, Andrieu F, Ortolland S, Nicolas R, Poiroux T, Baylac E, Dutartre D, Josse E, Claverie A, Haond M
Solid-State Electronics, 128, 72, 2017
6 Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
Navarro C, Barraud S, Martinie S, Lacord J, Jaud MA, Vinet M
Solid-State Electronics, 128, 155, 2017
7 Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology
Vignetti MM, Calmon F, Lesieur P, Savoy-Navarro A
Solid-State Electronics, 128, 163, 2017
8 High sensitivity pH sensing on the BEOL of industrial FDSOI transistors
Rahhal L, Ayele GT, Monfray S, Cloarec JP, Fornacciari B, Pardoux E, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A
Solid-State Electronics, 134, 22, 2017
9 Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI
Makovejev S, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V
Solid-State Electronics, 115, 219, 2016
10 Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond
Doris B, DeSalvo B, Cheng K, Morin P, Vinet M
Solid-State Electronics, 117, 37, 2016