화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Stability of the platinum electrode during high temperature annealing
Golosov DA, Okojie JE, Zavadski SM, Rudenkov AS, Melnikov SN, Kolos VV
Thin Solid Films, 661, 53, 2018
2 Towards the Development of Flexible Non-Volatile Memories
Han ST, Zhou Y, Roy VAL
Advanced Materials, 25(38), 5425, 2013
3 Orientation distributions of ferroelectric BLT films for high-density semiconductor memories
Seol BI, Park NJ, Kim SJ, Yang B, Oh YH, Hong SK
Materials Science Forum, 475-479, 1857, 2005
4 Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process
Shim SI, Kwon YS, Kim SI, Kim YT, Park JH
Solid-State Electronics, 49(3), 497, 2005
5 Effect of ferroelectric switching time on fatigue behaviors of (117)-and (00l)-oriented (Bi,La)(4)Ti3O12 thin films
Yoon SM, Lee NY, Ryu SO, Shin WC, You IK, Yu BG
Thin Solid Films, 484(1-2), 374, 2005
6 Microstructure and electrical properties of Ln(2)Ti(2)O(7) (Ln = La, Nd)
Kim WS, Ha SM, Yun S, Park HH
Thin Solid Films, 420-421, 575, 2002
7 Fabrication and characteristics of Au/PZT/BIT/p-Si ferroelectric memory diode
Yu J, Wang H, Dong XM, Zhou WL, Wang YB, Zheng YK, Zhao JH
Solid-State Electronics, 45(3), 411, 2001
8 Formation and Stability of Self-Assembled Monolayers on Thin-Films of Lead-Zirconate-Titanate (PZT)
Vaidya R, Simonson RJ, Cesarano J, Dimos D, Lopez GP
Langmuir, 12(11), 2830, 1996