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| No. | Article |
|---|---|
| 1 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism Schaepkens M, Standaert TEFM, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 17(1), 26, 1999 |