검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
MBE-growth of CdTe on GaSb substrates: A case study on the influence of substrate quality Madni I, Lei W, Ren YL, Antoszewski J, Faraone L Materials Chemistry and Physics, 214, 285, 2018 |
| 2 |
MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors Gu R, Antoszewski J, Lei W, Madni I, Umana-Membrenao G, Faraone L Journal of Crystal Growth, 468, 216, 2017 |
| 3 |
High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs Umana-Membreno GA, Chang SJ, Bawedin M, Antoszewski J, Cristoloveanu S, Faraone L Solid-State Electronics, 113, 109, 2015 |
| 4 |
A novel technique for degenerate p-type doping of germanium Sharp J, Lee WJ, Ploog K, Umana-Membreno GA, Faraone L, Dell JM Solid-State Electronics, 89, 146, 2013 |
| 5 |
Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin's technique Antoszewski J, Dell JM, Faraone L, Bresson N, Cristoloveanu S Solid-State Electronics, 54(9), 1047, 2010 |
| 6 |
Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe Sewell RH, Dell JM, Faraone L Journal of Vacuum Science & Technology B, 26(3), 1068, 2008 |
| 7 |
Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice Rao TVC, Antoszewski J, Rodriguez JB, Plis E, Krishna S, Faraone L Journal of Vacuum Science & Technology B, 26(3), 1081, 2008 |
| 8 |
A technique for fabricating uniform double-sided porous silicon wafers James TD, Keating AJ, Parish G, Faraone L, Musca CA Electrochemical and Solid State Letters, 10(11), D130, 2007 |
| 9 |
Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors Wehner JGA, Musca CA, Sewell RH, Dell JM, Faraone L Solid-State Electronics, 50(9-10), 1640, 2006 |
| 10 |
A detailed theoretical and experimental noise study in n-on-p Hg0.68Cd0.32Te photodiodes Jozwikowski K, Musca CA, Faraone L, Jozwikowska A Solid-State Electronics, 48(1), 13, 2004 |