검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Understanding and optimizing the floating body retention in FDSOI UTBOX Aoulaiche M, Simoen E, Caillat C, Witters L, Bourdelle KK, Nguyen BY, Martino J, Claeys C, Fazan P, Jurczak M Solid-State Electronics, 117, 123, 2016 |
| 2 |
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks Ritzenthaler R, Schram T, Bury E, Spessot A, Caillat C, Srividya V, Sebaai F, Mitard J, Ragnarsson LA, Groeseneken G, Horiguchi N, Fazan P, Thean A Solid-State Electronics, 84, 22, 2013 |
| 3 |
Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation Sallese JM, Krummenacher F, Fazan P Solid-State Electronics, 48(9), 1539, 2004 |
| 4 |
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model Sallese JM, Bucher M, Krummenacher F, Fazan P Solid-State Electronics, 47(4), 677, 2003 |
| 5 |
Modeling the polarization in ferroelectric materials: a novel analytical approach Meyer V, Sallese JM, Fazan P, Bard D, Pecheux F Solid-State Electronics, 47(9), 1479, 2003 |
| 6 |
Impact ot the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness Bouvet D, Beaud P, Fazan P, Sanjines R, Jacquinot E Journal of Vacuum Science & Technology B, 20(4), 1556, 2002 |
| 7 |
Transient effects in PD SOI MOSFETs and potential DRAM applications Okhonin S, Nagoga M, Sallese JM, Fazan P, Faynot O, Pontcharra J, Cristoloveanu S, van Meer H, De Meyer K Solid-State Electronics, 46(11), 1709, 2002 |
| 8 |
Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers Ils A, Cantoni M, Sallese JM, Fazan P, Han JP, Guo X, Ma TP Journal of Vacuum Science & Technology B, 18(4), 1915, 2000 |