검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates Zehnder U, Weimar A, Strauss U, Fehrer M, Hahn B, Lugauer HJ, Harle V Journal of Crystal Growth, 230(3-4), 497, 2001 |
| 2 |
Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC Baur J, Strauss U, Bruederl G, Eisert D, Oberschmid R, Hahn B, Lugauer HJ, Bader S, Zehnder U, Fehrer M, Harle V Journal of Crystal Growth, 230(3-4), 507, 2001 |
| 3 |
Influence of driving conditions on the stability of ZnSe-based cw-laser diodes Klude M, Fehrer M, Grossmann V, Hommel D Journal of Crystal Growth, 214, 1040, 2000 |
| 4 |
Low threshold II-VI laser diodes with transversal and longitudinal single-mode emission Legge M, Bacher G, Forchel A, Klude M, Fehrer M, Hommel D Journal of Crystal Growth, 214, 1045, 2000 |
| 5 |
Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes Wenisch H, Fehrer M, Klude M, Ohkawa K, Hommel D Journal of Crystal Growth, 214, 1075, 2000 |
| 6 |
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Stemmer J, Fedler F, Klausing H, Mistele D, Rotter T, Semchinova O, Aderhold J, Sanchez AM, Pacheco FJ, Molina SI, Fehrer M, Hommel D, Graul J Journal of Crystal Growth, 216(1-4), 15, 2000 |