화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer
Fenwick WE, Li NL, Xu TM, Melton A, Wang SJ, Yu HB, Summers C, Jamil M, Ferguson IT
Journal of Crystal Growth, 311(18), 4306, 2009
2 n-type, p-type and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with NH3 doping
Zaidi T, Melton A, Fenwick WE, Ferguson I
Journal of Vacuum Science & Technology B, 27(4), 1904, 2009
3 Effects of N doping on ZnO thin films grown by MOVPE
Zaidi T, Fenwick WE, Melton A, Li N, Gupta S, Yu HB, Ougazzaden A, Ferguson I
Journal of Crystal Growth, 310(23), 5011, 2008
4 MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications
Gupta S, Fenwick WE, Melton A, Zaidi T, Yu H, Rengarajan V, Nause J, Ougazzaden A, Ferguson IT
Journal of Crystal Growth, 310(23), 5032, 2008
5 Correlation of the structural and ferromagnetic properties of Ga1-xMnxN grown by metalorganic chemical vapor deposition
Kane MH, Strassburg M, Fenwick WE, Asghar A, Payne AM, Gupta S, Song Q, Zhang ZJ, Dietz N, Summers CJ, Ferguson IT
Journal of Crystal Growth, 287(2), 591, 2006
6 A nucleation study of group III-nitride multifunctional nanostructures
Gupta S, Kang H, Strassburg M, Asghar A, Kane M, Fenwick WE, Dietz N, Ferguson IT
Journal of Crystal Growth, 287(2), 596, 2006
7 Metal-organic chemical vapor deposition of ZnO
Pan M, Fenwick WE, Strassburg M, Li N, Kang H, Kane MH, Asghar A, Gupta S, Varatharajan R, Nause J, El-Zein N, Fabiano P, Steiner T, Ferguson I
Journal of Crystal Growth, 287(2), 688, 2006
8 Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN
Fenwick WE, Asghar A, Gupta S, Kang H, Strassburg M, Dietz N, Graham S, Kane MH, Ferguson IT
Journal of Vacuum Science & Technology A, 24(4), 1640, 2006