검색결과 : 8건
No. | Article |
---|---|
1 |
MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer Fenwick WE, Li NL, Xu TM, Melton A, Wang SJ, Yu HB, Summers C, Jamil M, Ferguson IT Journal of Crystal Growth, 311(18), 4306, 2009 |
2 |
n-type, p-type and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with NH3 doping Zaidi T, Melton A, Fenwick WE, Ferguson I Journal of Vacuum Science & Technology B, 27(4), 1904, 2009 |
3 |
Effects of N doping on ZnO thin films grown by MOVPE Zaidi T, Fenwick WE, Melton A, Li N, Gupta S, Yu HB, Ougazzaden A, Ferguson I Journal of Crystal Growth, 310(23), 5011, 2008 |
4 |
MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications Gupta S, Fenwick WE, Melton A, Zaidi T, Yu H, Rengarajan V, Nause J, Ougazzaden A, Ferguson IT Journal of Crystal Growth, 310(23), 5032, 2008 |
5 |
Correlation of the structural and ferromagnetic properties of Ga1-xMnxN grown by metalorganic chemical vapor deposition Kane MH, Strassburg M, Fenwick WE, Asghar A, Payne AM, Gupta S, Song Q, Zhang ZJ, Dietz N, Summers CJ, Ferguson IT Journal of Crystal Growth, 287(2), 591, 2006 |
6 |
A nucleation study of group III-nitride multifunctional nanostructures Gupta S, Kang H, Strassburg M, Asghar A, Kane M, Fenwick WE, Dietz N, Ferguson IT Journal of Crystal Growth, 287(2), 596, 2006 |
7 |
Metal-organic chemical vapor deposition of ZnO Pan M, Fenwick WE, Strassburg M, Li N, Kang H, Kane MH, Asghar A, Gupta S, Varatharajan R, Nause J, El-Zein N, Fabiano P, Steiner T, Ferguson I Journal of Crystal Growth, 287(2), 688, 2006 |
8 |
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN Fenwick WE, Asghar A, Gupta S, Kang H, Strassburg M, Dietz N, Graham S, Kane MH, Ferguson IT Journal of Vacuum Science & Technology A, 24(4), 1640, 2006 |