화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Impact ionization induced dynamic floating body effect in junctionless transistors
Yu R, Nazarov AN, Lysenko VS, Das S, Ferain I, Razavi P, Shayesteh M, Kranti A, Duffy R, Colinge JP
Solid-State Electronics, 90, 28, 2013
2 Influence of discrete dopant on quantum transport in silicon nanowire transistors
Akhavan ND, Ferain I, Yu R, Razavi P, Colinge JP
Solid-State Electronics, 70, 92, 2012
3 Foreword
Ferain I, Fiegna C
Solid-State Electronics, 71, 1, 2012
4 Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors
Ferain I, Colinge CA, Colinge JP
Nature, 479(7373), 310, 2011
5 Junctionless Nanowire Transistor (JNT): Properties and design guidelines
Colinge JP, Kranti A, Yan R, Lee CW, Ferain I, Yu R, Akhavan ND, Razavi P
Solid-State Electronics, 65-66, 33, 2011
6 Effect of Free Radical Activation for Low Temperature Si to Si Wafer Bonding
Byun KY, Ferain I, Colinge C
Journal of the Electrochemical Society, 157(1), H109, 2010
7 Nanowire transistors without junctions
Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher AM, McCarthy B, Murphy R
Nature Nanotechnology, 5(3), 225, 2010
8 Performance estimation of junctionless multigate transistors
Lee CW, Ferain I, Afzalian A, Yan R, Akhavan ND, Razavi P, Colinge JP
Solid-State Electronics, 54(2), 97, 2010
9 Influence of gate misalignment on the electrical characteristics of MuGFETS
Lee CW, Afzalian A, Ferain I, Yan R, Akhavan ND, Xiong WZ, Colinge JP
Solid-State Electronics, 54(3), 226, 2010
10 Interface stability in advanced high-kappa-metal-gate stacks
Adelmann C, Franquet A, Conard T, Witters T, Ferain I, Meersschaut J, Jurczak M, De Meyer K, Kittl JA, Van Elshocht S
Journal of Vacuum Science & Technology B, 27(3), 1021, 2009