검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Understanding and controlling Ga contamination in InAlN barrier layers Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G Journal of Crystal Growth, 507, 139, 2019 |
| 2 |
Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires Robin IC, Marotel P, Ei-Shaer AH, Petukhov V, Bakin A, Waag A, Lafossas M, Garcia J, Rosina M, Ribeaud A, Brochen S, Ferret P, Feuillet G Journal of Crystal Growth, 311(7), 2172, 2009 |
| 3 |
Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R Materials Science Forum, 483, 3, 2005 |
| 4 |
Modeling and simulation of SiC CVD in the horizontal hot-wall reactor concept Meziere J, Ucar M, Blanquet E, Pons M, Ferret P, Di Cioccio L Journal of Crystal Growth, 267(3-4), 436, 2004 |
| 5 |
Nitrogen doping of epitaxial SiC: Experimental evidence of the re-incorporation of etched nitrogen during growth Meziere J, Ferret P, Blanquet E, Pons M, Di Cioccio L, Billon T Materials Science Forum, 457-460, 731, 2004 |
| 6 |
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization Pons M, Baillet F, Blanquet E, Pernot E, Madar R, Chaussende D, Mermoux M, Di Coccio L, Ferret P, Feuillet G, Faure C, Billon T Applied Surface Science, 212, 177, 2003 |
| 7 |
Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition Pons M, Meziere J, Kuan SWT, Blanquet E, Ferret P, Di Cioccio L, Billon T, Madar R Materials Science Forum, 389-3, 223, 2002 |
| 8 |
Development of 600 V/8 A SiC Schottky diodes with epitaxial edge termination Templier F, Ferret P, Di Cioccio L, Collard E, Lhorte A, Billon T Materials Science Forum, 389-3, 1161, 2002 |
| 9 |
Experiment and modeling of the large-area etching and growth rate of epitaxial SiC Meziere J, Pons M, Dedulle JM, Blanquet E, Ferret P, Di Cioccio L, Billon T Materials Science Forum, 433-4, 141, 2002 |
| 10 |
Epitaxial growth of 6H-SiC by a vapor liquid solid method Ferret P, Leray A, Feuillet G, Lyan P, Pudda C, Billon T Materials Science Forum, 433-4, 201, 2002 |