| 1 |
Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric
Jiang CS, Liang RR, Wang J, Xu J
Solid-State Electronics, 126, 130, 2016 |
| 2 |
Magnetoelectric effect in GaMnAs /P(VDF-TrFE) composite multiferroic nanostructures
Yuldashev SU, Yalishev VS, Yunusov ZA, Lee SJ, Jeon HC, Kwon YH, Lee GT, Park CM, Kang TW
Current Applied Physics, 15, S22, 2015 |
| 3 |
Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor
Fukushima T, Yoshimura T, Masuko K, Maeda K, Ashida A, Fujimura N
Thin Solid Films, 518(11), 3026, 2010 |
| 4 |
C-V characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures for ferroelectric gate FET memory
Wang YP, Zhou L, Lu XB, Liu ZG
Applied Surface Science, 205(1-4), 176, 2003 |
| 5 |
Ferroelectric-gate field effect transistors using Nd2Ti2O7/Y2O3/Si structures
Kim WS, Ha SM, Yang JK, Park HH
Thin Solid Films, 398-399, 663, 2001 |
| 6 |
Characteristics of Pt/SrTiO3/Pb(Zr-0.52, Ti-0.48)O-3/SrTiO3/Si ferroelectric gate oxide structure
Shin DS, Park ST, Choi HS, Choi IH, Lee JY
Thin Solid Films, 354(1-2), 251, 1999 |
