검색결과 : 11건
No. | Article |
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1 |
Highly sensitive dual-FET hydrogen gas sensors with a surface modified gate electrode Kim BJ, Kim JS International Journal of Hydrogen Energy, 40(35), 11756, 2015 |
2 |
Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors Mizubayashi W, Fukuda K, Mori T, Endo K, Liu YX, Matsukawa T, O'uchi S, Ishikawa Y, Migita S, Morita Y, Tanabe A, Tsukada J, Yamauchi H, Masahara M, Ota H Solid-State Electronics, 111, 62, 2015 |
3 |
[기획특집: 그래핀 응용기술] 그래핀 일렉트로닉스 연구개발 현황 및 전망 장미, 양회창 Korean Industrial Chemistry News, 16(3), 23, 2013 |
4 |
Tuning surface charge property by floating gate field effect transistor Xue S, Hu N, Qian SZ Journal of Colloid and Interface Science, 365(1), 326, 2012 |
5 |
RF power performance evaluation of surface channel diamond MESFETs Camarchia V, Cappelluti F, Ghione G, Rossi MC, Calvani P, Conte G, Pasciuto B, Limiti E, Dominijanni D, Giovine E Solid-State Electronics, 55(1), 19, 2011 |
6 |
Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms Lattanzio L, Biswas A, De Michielis L, Ionescu AM Solid-State Electronics, 65-66, 234, 2011 |
7 |
The surface energy-dictated initial growth of a pentacene film on a polymeric adhesion layer for field-effect transistors Park J, Bae JH, Kim WH, Lee SD, Gwag JS, Kim DW, Noh JC, Choi JS Solid-State Electronics, 54(12), 1650, 2010 |
8 |
Label free carbohydrate detection by using phenylboronic acid gate-modified field effect transistor Matsumoto A, Sato N, Miyahara Y Current Applied Physics, 9(4), E214, 2009 |
9 |
Non-Ohmic conduction in polydiacetylene thin films Aleshin A, Chu SW, Kozub VI, Lee SW, Lee JY, Lee SH, Kim DW, Park YW Current Applied Physics, 5(1), 85, 2005 |
10 |
Comparison of HF and ozone treated SiC surfaces Mikalo RP, Hoffmann P, Batchelor DR, Lloyd-Spetz A, Lundstrom I, Schmeisser D Materials Science Forum, 353-356, 219, 2001 |