검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance Le Royer C, Casse M, Cooper D, Andrieu F, Weber O, Brevard L, Perreau P, Damlencourt JF, Baudot S, Previtali B, Tabone C, Allain F, Scheiblin P, Rauer C, Figuet C, Aulnette C, Daval N, Nguyen BY, Bourdelle KK, Gyani J, Valenza M Solid-State Electronics, 65-66, 9, 2011 |
| 2 |
Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates Figuet C, Kononchuk O Thin Solid Films, 518(9), 2458, 2010 |
| 3 |
Study of HCl and secco defect etching for characterization of thick sSOI Abbadie A, Bedell SW, Hartmann JM, Sadana DK, Brunier F, Figuet C, Cayrefourcq I Journal of the Electrochemical Society, 154(8), H713, 2007 |