검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Evidence of Heterogeneous Strain during Crystallization of Ge2Sb2Te5 Thin Film Fillot F, Loubriat S, Gergaud P, Maitrejean S Electrochemical and Solid State Letters, 14(7), H285, 2011 |
| 2 |
Growth of RuO2 thin films by liquid injection atomic layer deposition Husekova K, Dobrocka E, Rosova A, Soltys J, Satka A, Fillot F, Frohlich K Thin Solid Films, 518(16), 4701, 2010 |
| 3 |
Embedding of reduced pressure-chemical vapor deposition grown Ge nanocrystals in a high quality SiO2 matrix for non-volatile memory applications Masarotto L, Yckache K, Fanton A, Aussenac F, Fillot F Thin Solid Films, 518(19), 5382, 2010 |
| 4 |
Work Function Tuning of TixSiyNz Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition Fillot F, Maitrejean S, Pierre F, Chenevier B Electrochemical and Solid State Letters, 12(7), H272, 2009 |
| 5 |
Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget Martinez E, Leroux C, Benedetto N, Gaumer C, Charbonnier M, Licitra C, Guedj C, Fillot F, Lhostis S Journal of the Electrochemical Society, 156(8), G120, 2009 |
| 6 |
Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS Marseilhan D, Barnes JP, Fillot F, Hartmann JM, Holliger P Applied Surface Science, 255(4), 1412, 2008 |
| 7 |
Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering Hartmann JM, Gonzatti F, Fillot F, Billon T Journal of Crystal Growth, 310(1), 62, 2008 |
| 8 |
Impact of the H-2 bake temperature on the structural properties of tensily strained Si layers on SiGe Hartmann JM, Bogumilowciz Y, Abbadie A, Fillot F, Billon T Journal of Crystal Growth, 310(10), 2493, 2008 |