검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Dramatic improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ Journal of the Electrochemical Society, 151(12), G915, 2004 |
| 2 |
Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ Journal of Vacuum Science & Technology B, 22(2), 619, 2004 |
| 3 |
Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors Kang BS, Kim S, La Roche JR, Ren F, Fitch RC, Gillespie JK, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Pearton SJ Journal of Vacuum Science & Technology B, 22(6), 2635, 2004 |
| 4 |
Proton irradiation of MgO- or SC2O3 passivated AlGaN/GaN high electron mobility transistors Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, Via GD, Crespo A, Baca AG, Shul RJ Solid-State Electronics, 47(6), 1015, 2003 |
| 5 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |
| 6 |
Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers Gillespie JK, Fitch RC, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Pearton SJ, Ren F Solid-State Electronics, 47(10), 1859, 2003 |
| 7 |
The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Luo B, Mehandru RM, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch RC, Gillespie J, Dellmer R, Jenkins T, Sewell J, Via D, Crespo A Solid-State Electronics, 46(12), 2185, 2002 |