화학공학소재연구정보센터
검색결과 : 72건
No. Article
1 Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
Orak I, Eren H, Biyikli N, Dana A
Applied Surface Science, 467, 715, 2019
2 Synaptic device using a floating fin-body MOSFET with memory functionality for neural network
Woo SY, Choi KB, Lim S, Lee ST, Kim CH, Kang WM, Kwon D, Bae JH, Park BG, Lee JH
Solid-State Electronics, 156, 23, 2019
3 Leakage characterization of top select transistor for program disturbance optimization in 3D NAND flash
Zhang Y, Jin L, Jiang DD, Zou XQ, Zhao ZG, Gao J, Zeng M, Zhou WB, Tang ZY, Huo ZL
Solid-State Electronics, 141, 18, 2018
4 Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation
Kim DB, Kwon DW, Kim S, Lee SH, Park BG
Solid-State Electronics, 140, 46, 2018
5 System-level read disturb suppression techniques of TLC NAND flash memories for Read-Hot/Cold data mixed applications
Watanabe H, Deguchi Y, Kobayashi A, Matsui C, Takeuchi K
Solid-State Electronics, 147, 63, 2018
6 Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory
Liao JH, Ko ZJ, Lin YM, Lin HJ, Hsieh JY, Yang LW, Yang T, Chen KC, Lu CY
Solid-State Electronics, 146, 39, 2018
7 The influence of Ti doping and annealing on Ce2Ti2O7 flash memory devices
Kao CH, Chen SZ, Luo Y, Chiu WT, Chiu SW, Chen IC, Lin CY, Chen H
Applied Surface Science, 396, 1673, 2017
8 A study of selenium nanoparticles as charge storage element for flexible semi-transparent memory devices
Alotaibi S, Manjunatha KN, Paul S
Applied Surface Science, 424, 330, 2017
9 Effect of thermal annealing sequence on the crystal phase of HfO2 and charge trap property of Al2O3/HfO2/SiO2 stacks
Na H, Jeong J, Lee J, Shin H, Lee S, Sohn H
Current Applied Physics, 17(10), 1361, 2017
10 Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications
Huang MS, Suresh V, Chan MY, Ma YW, Lee PS, Krishnamoorthy S, Srinivasan MP
Materials Chemistry and Physics, 186, 36, 2017