검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy Zhou X, Yu ET, Florescu DI, Ramer JC, Lee DS, Ting SM, Armour EA Journal of Vacuum Science & Technology B, 23(4), 1808, 2005 |
| 2 |
Sapphire substrate misorientation effects on GaN nucleation layer properties Lu D, Florescu DI, Lee DS, Merai V, Ramer JC, Parekh A, Armour EA Journal of Crystal Growth, 272(1-4), 353, 2004 |
| 3 |
AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Florescu DI, Ramer JC, Merai VN, Parekh A, Lu D, Lee DS, Armour EA Journal of Crystal Growth, 272(1-4), 449, 2004 |