| 1 |
The effect of composition of plasma resistance of CaO-Al2O3-SiO2 glasses under Fluorocarbon Plasma with Ar+
Na H, Park J, Choi SC, Kim HJ
Applied Surface Science, 476, 663, 2019 |
| 2 |
Etching Mechanisms and Surface Conditions for SiOxNy Thin Films in CF4+CHF3+O-2 Inductively Coupled Plasma
Lee J, Kim J, Efremov A, Kim C, Lee HW, Kwon KH
Plasma Chemistry and Plasma Processing, 39(4), 1127, 2019 |
| 3 |
On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N-2/Ar Inductively Coupled Plasma
Lee J, Efremov A, Kim K, Kwon KH
Plasma Chemistry and Plasma Processing, 37(2), 489, 2017 |
| 4 |
Angular dependences of SiO2 etch rates at different bias voltages in CF4, C2F6, and C4F8 plasmas
Kim JH, Cho SW, Park CJ, Chae H, Kim CK
Thin Solid Films, 637, 43, 2017 |
| 5 |
Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3
Cao YC, Zhao L, Luo J, Wang K, Zhang BP, Yokota H, Ito Y, Li JF
Applied Surface Science, 366, 304, 2016 |
| 6 |
The erosion behaviors of Y2O3 and YF3 coatings under fluorocarbon plasma
Kim DM, Oh YS, Kim S, Kim HT, Lim DS, Lee SM
Thin Solid Films, 519(20), 6698, 2011 |
| 7 |
Effect of etching on dielectric constant and surface composition of SiCOH low-k films in inductively coupled fluorocarbon plasmas
Lee S, Woo J, Jung D, Yang J, Boo JH, Kim H, Chae H
Thin Solid Films, 517(14), 3942, 2009 |
| 8 |
Molecular dynamics simulation analyses on injection angle dependence of SiO2 sputtering yields by fluorocarbon beams
Kawase T, Hamaguchi S
Thin Solid Films, 515(12), 4883, 2007 |
| 9 |
Production and control of high-pressure surface-wave plasmas for water-repellant fluorocarbon film deposition
Mezerette D, Kuroda M, Sugai H
Thin Solid Films, 475(1-2), 178, 2005 |
| 10 |
Effects of low-molecular-weight radicals for reduction of microloading in high-aspect contact-hole etching
Samukawa S, Mukai T
Thin Solid Films, 374(2), 235, 2000 |
